STD2NB50.pdf
(
453 KB
)
Pobierz
STD2NB50
STD2NB50-1
N-CHANNEL 500V - 5
- 1A DPAK / IPAK
PowerMesh™ MOSFET
W
TYPE
V
DSS
R
DS(on)
I
D
STD2NB50
STD2NB50-1
500V
500V
< 6
W
< 6
1 A
1 A
W
TYPICAL R
DS
(on) = 5
W
n
3
3
100% AVALANCHE TESTED
2
n
1
1
VERY LOW INTRINSIC CAPACITANCES
n
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
n
DPAK
IPAK
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n
SWITH MODE POWER SUPPLIES (SMPS)
LIGHTING FOR INDUSTRIAL AND CONSUMER
ENVIRONMENT
n
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
W
)
500
V
V
GS
Gate- source Voltage
± 30
V
I
D
Drain Current (continuos) at T
C
= 25°C
1
A
I
D
Drain Current (continuos) at T
C
= 100°C
0.63
A
I
DM
(
l
)
Drain Current (pulsed)
4
A
P
TOT
Total Dissipation at T
C
= 25°C
40
W
Derating Factor
0.32
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
3.5
V/ns
T
stg
Storage Temperature
–65 to 150
°C
T
j
Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area
(1)I
SD
1A, di/dt
200A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
September 2001
£
£
£
£
1/10
STD2NB50/STD2NB50-1
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
3.125
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
T
l
Maximum Lead Temperature For Soldering Purpose
275
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
1
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
40
mJ
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
µA
V
DS
= Max Rating, T
C
= 125 °C
50
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±30V
±100
nA
ON
(1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
Gate Threshold Voltage
2.3
3
3.7
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 0.5 A
5
6
W
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 0.5 A
0.75
S
C
iss
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Input Capacitance
185
pF
C
oss
Output Capacitance
35
pF
Reverse Transfer
Capacitance
C
rss
4
pF
2/10
STD2NB50/STD2NB50-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 200V, I
D
= 0.5A
R
G
= 4.7
20
ns
V
GS
= 10V
(see test circuit, Figure 3)
W
t
r
Rise Time
24
ns
Q
g
Total Gate Charge
V
DD
= 4000V, I
D
= 1A,
V
GS
= 10V
7
10
nC
Q
gs
Gate-Source Charge
2.5
nC
Q
gd
Gate-Drain Charge
3.5
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
V
DD
= 400V, I
D
= 1 A,
R
G
= 4.7
Off-voltage Rise Time
20
ns
V
GS
= 10V
(see test circuit, Figure 5)
W,
t
f
Fall Time
24
ns
t
c
Cross-over Time
30
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
1
A
I
SDM
(2)
Source-drain Current (pulsed)
4
A
V
SD
(1)
I
SD
= 1A, V
GS
= 0
Forward On Voltage
1.5
V
t
rr
I
SD
= 1A, di/dt = 100A/µs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
Reverse Recovery Time
330
ns
Q
rr
Reverse Recovery Charge
780
µC
I
RRM
Reverse Recovery Current
4.7
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/10
STD2NB50/STD2NB50-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STD2NB50/STD2NB50-1
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
Plik z chomika:
sebo2200
Inne pliki z tego folderu:
2sc2335.pdf
(122 KB)
BUL38D.pdf
(74 KB)
LB1407.pdf
(61 KB)
LB1408.pdf
(60 KB)
STD2NB50.pdf
(453 KB)
Inne foldery tego chomika:
_Katalogi
DIODY-TYRYSTORY
Głośniki
MOSTKI PROSTOWNICZE
OPTOELEMENTY
Zgłoś jeśli
naruszono regulamin