2sc2335.pdf

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DATA SHEET

SILICON POWER TRANSISTOR

2SC2335

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

ORDERING INFORMATION

The 2SC2335 is a mold power transistor developed for high-speed

high-voltage switching, and is ideal for use as a driver in devices such

as switching regulators, DC/DC converters, and high-frequency power

amplifiers.

Part No.

Package

2SC2335

TO-220AB

FEATURES

• Low collector saturation voltage: V CE(sat) = 1.0 V MAX. @I C = 3.0 A

• Fast switching speed: t f = 1.0 µ s MAX. @I C = 3.0 A

• Wide base reverse-bias SOA: V CEX(SUS)1 = 450 V MIN. @I C = 3.0 A

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (T A = 25

°

C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

V CBO

500

V

Collector to emitter voltage

V CEO

400

V

Emitter to base voltage

V EBO

7.0

V

Collector current (DC)

I C(DC)

7.0

A

PW

s,

duty cycle ≤ 10%

≤

300

µ

Collector current (pulse)

I C(pulse)

15

A

Base current (DC)

I B(DC)

3.5

A

Total power dissipation

P T

T C = 25 ° C

40

W

T A = 25

°

C

1.5

W

Junction temperature

T j

150

° C

−

55 to +150

°

C

Storage temperature

T stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14861EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

©

2002

1998

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2SC2335

ELECTRICAL CHARACTERISTICS (T A = 25

°

C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to emitter voltage

V CEO(SUS)

I C = 3.0 A, I B1 = 0.6 A, L = 1 mH

400

V

I C = 3.0 A, I B1 =

I B2 = 0.6 A,

V BE(OFF) = − 5.0 V, L = 180 µ H, clamped

Collector to emitter voltage

V CEX(SUS)1

−

450

V

I C = 6.0 A, I B1 = 2.0 A,

I B2 = 0.6 A,

V BE(OFF) = − 5.0 V, L = 180 µ H, clamped

Collector to emitter voltage

V CEX(SUS)2

−

400

V

Collector cutoff current

I CBO

V CB = 400 V, I E = 0 A

10

µ

A

Collector cutoff current

I CER

V CE = 400 V, R BE = 51 Ω , T A = 125 ° C

1.0

mA

V CE = 400 V, V BE(OFF) =

1.5 V

A

Collector cutoff current

I CEX1

−

10

µ

V CE = 400 V, V BE(OFF) = − 1.5 V,

T A = 125

Collector cutoff current

I CEX2

1.0

mA

°

C

Emitter cutoff current

I EBO

V EB = 5.0 V, I C = 0 A

10

µ A

DC current gain

h FE1

V CE = 5.0 V, I C = 0.1 A Note

20

80

V CE = 5.0 V, I C = 1.0 A Note

DC current gain

h FE2

20

80

DC current gain

h FE3

V CE = 5.0 V, I C = 3.0 A Note

10

I C = 3.0 A, I B = 0.6 A Note

Collector saturation voltage

V CE(sat)

1.0

V

Base saturation voltage

V BE(sat)

I C = 3.0 A, I B = 0.6 A Note

1.2

V

Turn-on time

t on

I C = 3.0 A, R L = 50 Ω ,

I B1 =

1.0

µ s

150 V

Refer to the test circuit.

I B2 = 0.6 A, V CC

−

≅

s

Storage time

t stg

2.5

µ

µ s

Fall time

t f

1.0

Note

Pulse test PW ≤ 350 µ s, duty cycle ≤ 2%

h FE CLASSIFICATION

Marking

M

L

K

h FE2

20 to 40

30 to 60

40 to 80

SWITCHING TIME (t on , t stg , t f ) TEST CIRCUIT

Base current

waveform

Collector current

waveform

2

Data Sheet D14861EJ2V0DS

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2SC2335

TYPICAL CHARACTERISTICS (T A = 25

°

C)

$%

%

%

&'

(

°

°

3

Data Sheet D14861EJ2V0DS

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!, µ

( µ

* & µ

) *

(

+( +

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2SC2335

PACKAGE DRAWING (UNIT: mm)

-.+

$.

/.

0.*

5

Data Sheet D14861EJ2V0DS

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