BU2508AF.PDF

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199620875 UNPDF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
V CESM
Collector-emitter voltage peak value
V BE = 0 V
-
1500
V
V CEO
Collector-emitter voltage (open base)
-
700
V
I C
Collector current (DC)
-
8
A
I CM
Collector current peak value
-
15
A
P tot
Total power dissipation
T hs
£
25 ˚C
-
45
W
V CEsat
Collector-emitter saturation voltage
I C = 4.5 A; I B = 1.1 A
-
1
V
I Csat
Collector saturation current
4.5
-
A
t f
Fall time
I Csat = 4.5 A; I B(end) = 1.1 A
0.4
0.6
m
s
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
c
case
1
base
2
collector
b
3
emitter
case isolated
123
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V CESM
Collector-emitter voltage peak value
V BE = 0 V
-
1500
V
V CEO
Collector-emitter voltage (open base)
-
700
V
I C
Collector current (DC)
-
8
A
I CM
Collector current peak value
-
15
A
I B
Base current (DC)
-
4
A
I BM
Base current peak value
-
6
A
-I B(AV)
Reverse base current
average over any 20 ms period
-
100
mA
-I BM
Reverse base current peak value 1
-
5
A
P tot
Total power dissipation
T hs
£
25 ˚C
-
45
W
T stg
Storage temperature
-65
150
˚C
T j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
R th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R th j-a
Junction to ambient
in free air
35
-
K/W
1 Turn-off current.
September 1997
1
Rev 1.500
199620875.017.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
Repetitive peak voltage from all R.H.
£
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CES
Collector cut-off current 2
V BE = 0 V; V CE = V CESMmax
-
-
1.0
mA
I CES
V BE = 0 V; V CE = V CESMmax ;
-
-
2.0
mA
T j = 125 ˚C
I EBO
Emitter cut-off current
V EB = 7.5 V; I C = 0 A
-
-
1.0
mA
BV EBO
Emitter-base breakdown voltage
I B = 1 mA
7.5
13.5
-
V
V CEOsust
Collector-emitter sustaining voltage I B = 0 A; I C = 100 mA;
700
-
-
V
L = 25 mH
V CEsat
Collector-emitter saturation voltages I C = 4.5 A; I B = 1.1 A
-
-
1.0
V
V BEsat
Base-emitter saturation voltage
I C = 4.5 A; I B = 1.7 A
-
-
1.1
V
h FE
DC current gain
I C = 100 mA; V CE = 5 V
-
13
-
h FE
I C = 4.5 A; V CE = 1 V
4
5.5
7.0
DYNAMIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
C c
Collector capacitance
I E = 0 A; V CB = 10 V; f = 1 MHz
80
-
pF
Switching times (16 kHz line
I Csat = 4.5 A; I B(end) = 1.1 A; L B = 6
m
H;
deflection circuit)
-V BB = 4 V; (-dI B /dt = 0.6 A/
m
s)
t s
Turn-off storage time
5.0
6.0
m
s
t f
Turn-off fall time
0.4
0.6
m
s
Switching times (38 kHz line
I Csat = 4.0 A; I B(end) = 0.9 A; L B = 6
m
H;
deflection circuit)
-V BB = 4 V; (-dI B /dt = 0.6 A/
m
s)
t s
Turn-off storage time
4.7
5.7
m
s
t f
Turn-off fall time
0.25
0.35
m
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.500
199620875.018.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
+ 50v
ICsat
90 %
100-200R
IC
Horizontal
10 %
tf
t
Oscilloscope
ts
IBend
IB
Vertical
100R
1R
t
6V
30-60 Hz
- IBM
Fig.1. Test circuit for V CEOsust .
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
250
1mH
200
100
IBend
LB
D.U.T.
12nF
BY228
0
VCE / V
min
VCEOsust
-VBB
Fig.2. Oscilloscope display for V CEOsust .
Fig.5. Switching times test circuit.
TRANSISTOR
DIODE
ICsat
100
h
FE
IC
t
5V
IB
IBend
10
t
1V
20us
26us
64us
Tj = 25 C
Tj = 125 C
VCE
1
0.01
0.1
1
10
t
IC / A
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. h FE = f (I C )
parameter V CE
September 1997
3
Rev 1.500
199620875.019.png 199620875.020.png 199620875.001.png 199620875.002.png 199620875.003.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
1.2
VBESAT / V
10
VCESAT / V
1.1
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
1
6A
0.9
4.5A
0.8
IC/IB=
1
0.7
3
4
5
3A
0.6
0.5
IC=2A
0.4
0.1
1
10
0.1
0.1
1
10
IC / A
IB / A
Fig.7. Typical base-emitter saturation voltage.
V BE sat = f (I C ); parameter I C /I B
Fig.10. Typical collector-emitter saturation voltage.
V CE sat = f (I B ); parameter I C
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VCESAT / V
1000
Eoff / uJ
IC/IB=
5
4
3
IC = 4.5A
3.5A
Tj = 25 C
Tj = 125 C
100
0.1
1
10
10
0.1
1
10
IC / A
IB / A
Fig.8. Typical collector-emitter saturation voltage.
V CE sat = f (I C ); parameter I C /I B
Fig.11. Typical turn-off losses. T j = 85˚C
Eoff = f (I B ); parameter I C ; f = 16 kHz
1.2
VBESAT / V
12
11
10
9
8
7
6
5
4
3
2
1
0
ts, tf / us
1.1
Tj = 25 C
Tj = 125 C
ts
1
0.9
IC=
0.8
6A
4.5A
3A
2A
IC =
4.5A
3.5A
0.7
tf
0.6
0
1
2
3
4
0.1
1
10
IB / A
IB / A
Fig.9. Typical base-emitter saturation voltage.
V BE sat = f (I B ); parameter I C
Fig.12. Typical collector storage and fall time.
ts = f (I B ); tf = f (I B ); parameter I C ; T j = 85˚C; f = 16 kHz
September 1997
4
Rev 1.500
199620875.004.png 199620875.005.png 199620875.006.png 199620875.007.png 199620875.008.png 199620875.009.png
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
100
IC / A
100
IC / A
= 0.01
= 0.01
ICM max
tp =
ICM max
tp =
10
IC max
10
IC max
II
10 us
II
10 us
Ptot max
Ptot max
1
100 us
1
100 us
I
1 ms
I
1 ms
0.1
0.1
10 ms
10 ms
DC
DC
0.01
0.01
1
10
100
1000
1
10
100
1000
VCE / V
VCE / V
Fig.13. Forward bias safe operating area. T hs = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
Fig.15. Forward bias safe operating area. T hs = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30
±
NB: Mounted without heatsink compound and
30
±
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
with heatsink compound
0
20
40
60
80
100 120 140
Ths / C
Fig.14. Normalised power dissipation.
PD% = 100
×
P D /P D 25˚C = f (T hs )
September 1997
5
Rev 1.500
5 newton force on the centre of
the envelope.
5 newton force on the centre of
the envelope.
199620875.010.png 199620875.011.png 199620875.012.png 199620875.013.png 199620875.014.png 199620875.015.png 199620875.016.png

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