STP14NF12.PDF

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STP14NF12
STP14NF12FP
- 14A TO-220/TO-220FP
LOW GATE CHARGE STripFET™ POWER MOSFET
N-CHANNEL 120V - 0.16
W
TYPE
V DSS
R DS(on)
I D
STP14NF12
STP14NF12FP
120 V
120 V
< 0.18
W
14 A
14 A
< 0.18
W
n
TYPICAL R DS (on) = 0.16
W
EXCEPTIONAL dv/dt CAPABILITY
n
n
APPLICATION ORIENTED
CHARACTERIZATION
3
3
2
2
1
1
TO-220
TO-220FP
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n
HIGH-EFFICIENCY DC-DC CONVERTERS
n
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP14NF12
STP14NF12FP
V DS
Drain-source Voltage (V GS =0)
120
V
V DGR
Drain-gate Voltage (R GS =20k
W
)
120
V
V GS
Gate- source Voltage
±20
V
I D
Drain Current (continuous) at T C = 25°C
14
8.5
A
I D
Drain Current (continuous) at T C = 100°C
9
6
A
I DM ( · )
Drain Current (pulsed)
56
34
A
P TOT
Total Dissipation at T C = 25°C
60
25
W
Derating Factor
0.4
0.17
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
9
V/ns
E AS (2)
Single Pulse Avalanche Energy
60
mJ
V ISO
Insulation Withstand Voltage (DC)
-
2500
V
T j
Operating Junction Temperature
-55 to 175
°C
T stg
Storage Temperature
( l ) Pulse width limited by safe operating area
(1) I SD £
14A, di/dt
£
300A/µs, V DD £
V (BR)DSS ,T j £
T JMAX.
(2) Starting T j = 25°C, I D = 14A, V DD =50V
August 2002
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STP14NF12/STP14NF12FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case Thermal Resistance Junction-case Max
2.5
6
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
T l
Maximum Lead Temperature For Soldering Purpose
300
°C
ELECTRICAL CHARACTERISTICS (T CASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS
Drain-source
Breakdown Voltage
I D = 250 µA, V GS = 0
120
V
I DSS
Zero Gate Voltage
Drain Current (V GS =0)
V DS = Max Rating
1
µA
V DS = Max Rating, T C = 125 °C
10
µA
I GSS
Gate-body Leakage
Current (V DS =0)
V GS = ±20V
±100
nA
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th)
Gate Threshold Voltage
V DS =V GS ,I D = 250µA
2
3
4
V
R DS(on)
Static Drain-source On
Resistance
V GS =10V,I D =7A
0.16
0.18
W
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs (1)
Forward Transconductance
V DS =15V , I D =7A
4
S
C iss
Input Capacitance
V DS =25V,f=1MHz,V GS =0
460
pF
C oss
Output Capacitance
70
pF
C rss
Reverse Transfer
Capacitance
30
pF
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STP14NF12/STP14NF12FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
Turn-on Delay Time
V DD =50V,I D =7A
R G = 4.7
16
ns
V GS =10V
(Resistive Load, see Figure 3)
W
t r
Rise Time
25
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD =80V,I D =14A,
V GS =10V
15.5
3.7
4.7
21
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(off)
t f
Turn-off-Delay Time
Fall Time
V GS = 10V
(Resistive Load, see Figure 3)
W,
32
8
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
Source-drain Current
14
A
I SDM (2)
Source-drain Current (pulsed)
56
A
V SD (1)
Forward On Voltage
I SD =14A,V GS =0
1.5
V
t rr
Q rr
I RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I SD = 14 A, di/dt = 100A/µs,
V DD =50V,T j = 150°C
(see test circuit, Figure 5)
92
230
5
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area For TO-220
Safe Operating Area For TO-220FP
3/9
V DD =50V,I D =7A,
R G =4.7
378323172.003.png
STP14NF12/STP14NF12FP
Thermal Impedance For TO-220
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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STP14NF12/STP14NF12FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
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