BF245A-D.PDF

(169 KB) Pobierz
Document:
ON Semiconductor
JFET VHF/UHF Amplifiers
N–Channel — Depletion
BF245A
BF245B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V DS
± 30
Vdc
Drain–Gate Voltage
V DG
30
Vdc
1
Gate–Source Voltage
V GS
30
Vdc
2 3
Drain Current
I D
100
mAdc
BF244A, BF244B
CASE 29–11, STYLE 22
TO–92 (TO–226AA)
Forward Gate Current
I G(f)
10
mAdc
Total Device Dissipation @ T A = 25
C
P D
350
2.8
mW
mW/
Derate above 25
°
C
°
C
Storage Channel Temperature Range
T stg
–65 to +150
°
C
3 DRAIN
3 DRAIN
1
2 3
2
GATE
1
GATE
BF245, BF245A,
BF245B, BF245C
CASE 29–11, STYLE 23
TO–92 (TO–226AA)
STYLE 22
1 SOURCE
STYLE 23
2 SOURCE
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(I G = 1.0 m Adc, V DS = 0)
V (BR)GSS
30
Vdc
Gate–Source
(V DS = 15 Vdc, I D = 200
V GS
Vdc
m
Adc)
BF245 (1)
BF245A, BF244A (2)
BF245B, BF244B
BF245C
0.4
0.4
1.6
3.2
7.5
2.2
3.8
7.5
Gate–Source Cutoff Voltage
(V DS = 15 Vdc, I D = 10 nAdc)
V GS(off)
0.5
8.0
Vdc
Gate Reverse Current
(V GS = 20 Vdc, V DS = 0)
I GSS
5.0
nAdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(V DS = 15 Vdc, V GS = 0)
I DSS
mAdc
BF245 (1)
BF245A, BF244A (2)
BF245B, BF244B
BF245C
2.0
2.0
6.0
12
25
6.5
15
25
1. On orders against the BF245, any or all subgroups might be shipped.
2. On orders against the BF244A, any or all subgroups might be shipped.
W Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
BF245A/D
°
199615172.009.png 199615172.010.png 199615172.011.png 199615172.012.png 199615172.001.png
BF245A BF245B
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V DS = 15 Vdc, V GS = 0, f = 1.0 kHz)
J Y fs M
3.0
6.5
mmhos
Output Admittance
(V DS = 15 Vdc, V GS = 0, f = 1.0 kHz)
Y os M
40
mhos
Forward Transfer Admittance
(V DS = 15 Vdc, V GS = 0, f = 200 MHz)
J Y fs M
5.6
mmhos
Reverse Transfer Admittance
(V DS = 15 Vdc, V GS = 0, f = 200 MHz)
J Y rs M
1.0
mmhos
Input Capacitance
(V DS = 20 Vdc, –V GS = 1.0 Vdc)
C iss
3.0
pF
Reverse Transfer Capacitance
(V DS = 20 Vdc, –V GS = 1.0 Vdc, f = 1.0 MHz)
C rss
0.7
pF
Output Capacitance
(V DS = 20 Vdc, –V GS = 1.0 Vdc, f = 1.0 MHz)
C oss
0.9
pF
Cut–off Frequency (3)
(V DS = 15 Vdc, V GS = 0)
F (Yfs)
700
MHz
3. The frequency at which g fs is 0.7 of its value at 1 kHz.
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V DS = 15 Vdc, T channel = 25 ° C)
30
5.0
20
3.0
b is @ I DSS
2.0
10
b rs @ I DSS
7.0
1.0
5.0
0.7
0.5
3.0
g is @ I DSS
0.25 I DSS
2.0
0.3
g is @ 0.25 I DSS
0.2
1.0
0.7
0.1
0.5
g rs @ I DSS , 0.25 I DSS
b is @ 0.25 I DSS
0.07
0.3
0.05
10
20
30
50 70 100
200 300
500 700 1000
10
20
30
50 70 100
200 300
500 700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 1. Input Admittance (y is )
Figure 2. Reverse Transfer Admittance (y rs )
20
10
10
5.0
7.0
g fs @ I DSS
2.0
b os @ I DSS and 0.25 I DSS
1.0
g fs @ 0.25 I DSS
3.0
0.5
2.0
0.2
g os @ I DSS
1.0
|b fs | @ I DSS
0.1
0.7
0.05
0.5
|b fs | @ 0.25 I DSS
g os @ 0.25 I DSS
0.3
0.02
0.2
10
20 30
50 70 100
200 300
500 700 1000
0.01
10
20 30
50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (y fs )
Figure 4. Output Admittance (y os )
http://onsemi.com
2
J
5.0
199615172.002.png 199615172.003.png
BF245A BF245B
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(V DS = 15 Vdc, T channel = 25 ° C, Data Points in MHz)
30 °
20 °
10 °
0 °
350 °
340 °
330 °
30 °
20 °
10 °
0 °
350 °
340 °
330 °
40 °
1.0
100
I D = 0.25 I DSS
320 °
40 °
0.4
32
100
200
200
300
0.9
0.3
50 °
400
310 °
50 °
I D = I DSS , 0.25 I DSS
31
300
900
500
0.8
I D = I DSS
800
0.2
60 °
400
300 °
60 °
30
700
600
600
70 °
0.7
500
290 °
70 °
500
0.1
29
700
400
600
80 °
800
280 °
80 °
300
28
0.6
700
0.0
200
800
900
90 °
270 °
90 °
27
900
100
100 °
260 °
100 °
26
110 °
250 °
110 °
25
120 °
240 °
120 °
24
130 °
230 °
130 °
23
140 °
220 °
140 °
22
150 °
160 °
170 °
180 °
190 °
200 °
210 °
150 °
160 °
170 °
180 °
190 °
200 °
210 °
Figure 5. S 11s
Figure 6. S 12s
30 °
20 °
10 °
0 °
350 °
340 °
330 °
30 °
20 °
10 °
0 °
350 °
340 °
330 °
100
200
I D = 0.25 I DSS
1.0
300
40 °
320 °
40 °
400
32
100
200
500
300
40 500
600
700
800
600
0.6
0.9
700
50 °
310 °
50 °
I D = I DSS
800
31
900
0.5
0.8
900
60 °
300 °
60 °
30
70 °
900
0.4
290 °
70 °
0.7
29
800
900
80 °
700
800
0.3
280 °
80 °
28
0.6
700
I D = 0.25 I DSS
90 °
600
270 °
90 °
27
600
100 °
500
500
0.3
260 °
100 °
26
100
400
400
110 °
300 200
250 °
110 °
25
0.4
300
120 °
240 °
120 °
24
I D = I DSS
200
100
0.5
130 °
230 °
130 °
23
0.6
140 °
220 °
140 °
22
150 °
160 °
170 °
180 °
190 °
200 °
210 °
150 °
160 °
170 °
180 °
190 °
200 °
210 °
Figure 7. S 21s
Figure 8. S 22s
http://onsemi.com
3
199615172.004.png 199615172.005.png
BF245A BF245B
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V DG = 15 Vdc, T channel = 25 ° C)
20
0.5
10
0.3
0.2
b rg @ I DSS
7.0
g ig @ I DSS
5.0
0.1
3.0
g rg @ 0.25 I DSS
0.07
2.0
0.05
1.0
0.03
0.25 I DSS
0.02
0.7
0.5
b ig @ I DSS
0.01
b ig @ 0.25 I DSS
g ig @ I DSS , 0.25 I DSS
0.3
0.007
0.2
0.005
10
20 30
50 70 100
200 300
500 700 1000
10
20
30
50 70 100
200 300
500 700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 9. Input Admittance (y ig )
Figure 10. Reverse Transfer Admittance (y rg )
10
1.0
g fg @ I DSS
7.0
0.7
b og @ I DSS , 0.25 I DSS
5.0
0.5
3.0
g fg @ 0.25 I DSS
0.3
2.0
0.2
1.0
0.1
0.7
0.07
g og @ I DSS
b fg @ I DSS
0.3
0.03
0.2
b rg @ 0.25 I DSS
0.02
g og @ 0.25 I DSS
0.1
0.01
10
20 30
50 70 100
200 300
500 700 1000
10
20 30
50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (y fg )
Figure 12. Output Admittance (y og )
http://onsemi.com
4
0.5
0.05
199615172.006.png
BF245A BF245B
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(V DS = 15 Vdc, T channel = 25 ° C, Data Points in MHz)
30 °
20 °
10 °
0 °
350 °
340 °
330 °
30 °
20 °
10 °
0 °
350 °
340 °
330 °
40 °
0.7
320 °
40 °
0.04
32
I D = 0.25 I DSS
100 200
300
0.6
400
0.03
50 °
100
500
310 °
50 °
31
200
600
700
300
0.5
0.02
400
60 °
300 °
60 °
30
500
800
I D = I DSS
600
0.4
0.01
70 °
290 °
70 °
29
900
700
80 °
280 °
80 °
28
800
0.3
0.0
100
90 °
900
270 °
90 °
27
500
600
100 °
260 °
100 °
I D = 0.25 I DSS
26
600
I D = I DSS
110 °
250 °
110 °
700
700
0.01
25
800
120 °
240 °
120 °
800
24
0.02
900
130 °
230 °
130 °
23
900
0.03
140 °
220 °
140 °
0.04
22
150 °
160 °
170 °
180 °
190 °
200 °
210 °
150 °
160 °
170 °
180 °
190 °
200 °
210 °
Figure 13. S 11g
Figure 14. S 12g
30 °
20 °
10 °
0 °
350 °
340 °
330 °
30 °
20 °
10 °
0 °
350 °
340 °
330 °
1.5
300
40 °
0.5
320 °
40 °
1.0
200
500
32
400
700
100
600
100
0.4
0.9
800
900
I D = I DSS
50 °
100
310 °
50 °
I D = I DSS , 0.25 I DSS
31
0.3
0.8
60 °
300 °
60 °
30
70 °
0.2
I D = 0.25 I DSS
290 °
70 °
0.7
29
80 °
280 °
80 °
28
0.1
0.6
900
90 °
270 °
90 °
27
900
100 °
260 °
100 °
26
110 °
250 °
110 °
25
120 °
240 °
120 °
24
130 °
230 °
130 °
23
140 °
220 °
140 °
22
150 °
160 °
170 °
180 °
190 °
200 °
210 °
150 °
160 °
170 °
180 °
190 °
200 °
210 °
Figure 15. S 21g
Figure 16. S 22g
http://onsemi.com
5
199615172.007.png 199615172.008.png
Zgłoś jeśli naruszono regulamin