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BPW41N
Vishay Telefunken
Silicon PIN Photodiode
Description
BPW41N is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
( p = 950 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
Large radiant sensitive area (A=7.5 mm 2 )
Wide angle of half sensitivity
j
=
±
65
High radiant sensitivity
Fast response times
Small junction capacitance
Plastic case with IR filter ( =950 nm)
Suitable for near infrared radiation
94 8480
Applications
High speed photo detector
Absolute Maximum Ratings
T amb = 25 C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V R
60
V
Power Dissipation
T amb 25 C
P V
215
mW
Junction Temperature
T j
100
C
Storage Temperature Range
T stg
–55...+100
C
Soldering Temperature
T sd
260
C
t 5 s
Thermal Resistance Junction/Ambient
R thJA
350
K/W
Document Number 81522
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•
FaxBack +1-408-970-5600
Rev. 2, 20-May-99
1 (5)
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BPW41N
Vishay Telefunken
Basic Characteristics
T amb = 25 C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
I R = 100 A, E = 0
V (BR)
60
V
Reverse Dark Current
V R = 10 V, E = 0
I ro
2
30
nA
Diode Capacitance
V R = 0 V, f = 1 MHz, E = 0
C D
70
pF
V R = 3 V, f = 1 MHz, E = 0
C D
25
40
pF
E e = 1 mW/cm 2 , = 950 nm
Open Circuit Voltage
V o
350
mV
E e = 1 mW/cm 2 , = 950 nm
Temp. Coefficient of V o
TK Vo
–2.6
mV/K
E e = 1 mW/cm 2 , = 950 nm
Short Circuit Current
I k
38
A
E e = 1 mW/cm 2 , = 950 nm
Temp. Coefficient of I k
TK Ik
0.1
%/K
E e = 1 mW/cm 2 ,
= 950 nm, V R = 5 V
Reverse Light Current
I ra
43
45
A
Angle of Half Sensitivity
j
±
65
deg
Wavelength of Peak Sensitivity
p
950
nm
Range of Spectral Bandwidth
870...1050
nm
0.5
4x10 –14
Noise Equivalent Power
V R = 10 V, = 950 nm
NEP
W/
/
Hz
Rise Time
V R = 10 V, R L = 1k ,
= 820 nm
t r
100
ns
Fall Time
V R = 10 V, R L = 1k ,
= 820 nm
t f
100
ns
Typical Characteristics (T amb = 25 C unless otherwise specified)
1000
1.4
V R =5V
=950nm
1.2
100
1.0
10
0.8
V R =10V
1
0.6
100
100
20
40
60
80
0
20
40
60
80
T amb – Ambient Temperature ( °C )
T amb – Ambient Temperature ( °C )
94 8403
94 8409
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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Document Number 81522
2 (5)
Rev. 2, 20-May-99
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BPW41N
Vishay Telefunken
1000
1.2
1.0
100
0.8
10
0.6
V R =5V
=950nm
0.4
1
0.2
0.1
0
10
1150
0.01
0.1
1
750
850
950
1050
E e – Irradiance ( mW / cm 2 )
– Wavelength ( nm )
94 8414
94 8408
Figure 6. Relative Spectral Sensitivity vs. Wavelength
Figure 3. Reverse Light Current vs. Irradiance
0°
10
°
20
°
100
30
°
1 mW/cm 2
0.5 mW/cm 2
40°
1.0
=950nm
0.2 mW/cm 2
10
0.9
50
°
0.1 mW/cm 2
0.8
60°
0.05 mW/cm 2
70°
80°
0.7
0.02 mW/cm 2
1
100
0.6
0.1
1
10
0.6
0.4
0.2
0
0.2
0.4
V R – Reverse Voltage ( V )
94 8406
94 8415
Figure 4. Reverse Light Current vs. Reverse Voltage
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
80
E=0
f=1MHz
60
40
20
0
100
0.1
1
10
V R – Reverse Voltage ( V )
94 8407
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 81522
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Rev. 2, 20-May-99
3 (5)
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BPW41N
Vishay Telefunken
Dimensions in mm
96 12195
www.vishay.de
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FaxBack +1-408-970-5600
Document Number 81522
4 (5)
Rev. 2, 20-May-99
748372911.047.png 748372911.049.png
 
BPW41N
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81522
www.vishay.de
•
FaxBack +1-408-970-5600
Rev. 2, 20-May-99
5 (5)
748372911.050.png 748372911.051.png
 

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