opt101.pdf

(118 KB) Pobierz
Monolithic_Photodiode_and_Single-Supply_Transimpedance_Amp
®
OPT101
MONOLITHIC PHOTODIODE AND
SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER
FEATURES
l
SINGLE SUPPLY: +2.7 to +36V
DESCRIPTION
The OPT101 is a monolithic photodiode with on-chip
transimpedance amplifier. Output voltage increases
linearly with light intensity. The amplifier is designed
for single or dual power supply operation, making it
ideal for battery operated equipment.
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates
the problems commonly encountered in discrete de-
signs such as leakage current errors, noise pick-up and
gain peaking due to stray capacitance. The 0.09 x 0.09
inch photodiode is operated in the photoconductive
mode for excellent linearity and low dark current.
The OPT101 operates from +2.7V to +36V supplies
and quiescent current is only 120mA. It is available in
clear plastic 8-pin DIP, 5-pin SIP and J-formed DIP for
surface mounting. Temperature range is 0°C to 70°C.
l
PHOTODIODE SIZE: 0.090 x 0.090 inch
l
INTERNAL 1M
W
FEEDBACK RESISTOR
l
HIGH RESPONSIVITY: 0.45A/W (650nm)
l
BANDWIDTH: 14kHz at R F = 1M W
l
LOW QUIESCENT CURRENT: 120
m
A
l
AVAILABLE IN 8-PIN DIP, 5-PIN SIP, AND
8-LEAD SURFACE MOUNT PACKAGES
APPLICATIONS
l
MEDICAL INSTRUMENTATION
l
LABORATORY INSTRUMENTATION
l
POSITION AND PROXIMITY SENSORS
l
PHOTOGRAPHIC ANALYZERS
l
BARCODE SCANNERS
SMOKE DETECTORS
l CURRENCY CHANGERS
SPECTRAL RESPONSIVITY
0.7
0.7
(Pin available
on DIP only.)
V+
Ultraviolet
Infrared
0.6
0.6
2
(2)
1
3pF
0.5
0.5
Using Internal
1M
1M W
0.4
W
Resistor
0.4
4
(4)
8pF
0.3
0.3
0.2
0.2
5
(5)
0.1
0.1
7.5mV
l
0
0
V B
200 300 400 500 600 700 800 900 1000 1100
OPT101
Wavelength (nm)
(1)
8
(3)
3
(SIP)
DIP
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
®
© 1994 Burr-Brown Corporation
PDS-1257D
1
Printed in U.S.A. March, 1998
SBBS002
l
OPT101
199641170.094.png 199641170.104.png 199641170.115.png 199641170.126.png 199641170.001.png 199641170.012.png 199641170.023.png 199641170.034.png 199641170.045.png 199641170.049.png 199641170.050.png 199641170.051.png 199641170.052.png 199641170.053.png 199641170.054.png 199641170.055.png 199641170.056.png 199641170.057.png 199641170.058.png 199641170.059.png 199641170.060.png 199641170.061.png 199641170.062.png 199641170.063.png 199641170.064.png 199641170.065.png 199641170.066.png 199641170.067.png 199641170.068.png 199641170.069.png 199641170.070.png 199641170.071.png 199641170.072.png 199641170.073.png 199641170.074.png 199641170.075.png 199641170.076.png 199641170.077.png 199641170.078.png 199641170.079.png 199641170.080.png 199641170.081.png 199641170.082.png 199641170.083.png 199641170.084.png 199641170.085.png 199641170.086.png 199641170.087.png 199641170.088.png 199641170.089.png 199641170.090.png 199641170.091.png 199641170.092.png 199641170.093.png 199641170.095.png 199641170.096.png 199641170.097.png 199641170.098.png 199641170.099.png 199641170.100.png 199641170.101.png 199641170.102.png
 
SPECIFICATIONS
At T A = +25
°
C, V S = +2.7V to +36V,
l
= 650nm, internal 1M
W
feedback resistor, and R L = 10k
W,
unless otherwise noted.
OPT101P, W
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
RESPONSIVITY
Photodiode Current
650nm
0.45
A/W
Voltage Output
650nm
0.45
V/
m
W
vs Temperature
100
ppm/
°
C
Unit to Unit Variation
650nm
±
%
Nonlinearity (1)
FS Output = 24V
±
0.01
% of FS
Photodiode Area
(0.090 x 0.090in)
0.008
in 2
(2.29 x 2.29mm)
5.2
mm 2
DARK ERRORS, RTO (2)
Offset Voltage, Output
+5
+7.5
+10
mV
vs Temperature
±
2.5
m
V/
C
vs Power Supply
V S = +2.7V to +36V
10
100
m
V/V
Voltage Noise, Dark, f B = 0.1Hz to 20kHz
V S = +15V, V PIN3 = –15V
300
m
Vrms
TRANSIMPEDANCE GAIN
Resistor
1
M
W
Tolerance, P
±
0.5
±
2
%
W
±
0.5
%
vs Temperature
±
50
ppm/
°
C
FREQUENCY RESPONSE
Bandwidth
V OUT = 10Vp-p
14
kHz
Rise Fall Time, 10% to 90%
V OUT = 10V Step
28
m
s
Settling Time, 0.05%
V OUT = 10V Step
160
m
s
0.1%
80
m
s
1%
70
m
s
Overload Recovery
100%, Return to Linear Operation
50
m
s
OUTPUT
Voltage Output, High
(V S ) – 1.3
(V S ) – 1.15
V
Capacitive Load, Stable Operation
10
nF
Short-Circuit Current
V S = 36V
15
mA
POWER SUPPLY
Operating Voltage Range
+2.7
+36
V
Quiescent Current
Dark, V PIN3 = 0V
120
240
m
A
R L =
¥
, V OUT = 10V
220
m
A
TEMPERATURE RANGE
Specification
0
+70
°
C
Operating
0
+70
°
C
Storage
–25
+85
°
C
Thermal Resistance,
q
JA
100
°
C/W
NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.
PHOTODIODE SPECIFICATIONS
T A = +25
C, V S = +2.7V to +36V unless otherwise noted.
Photodiode of OPT101P
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Photodiode Area
(0.090 x 0.090in)
0.008
in 2
(2.29 x 2.29mm)
5.2
mm 2
Current Responsivity
650nm
0.45
A/W
650nm
865
m
A/W/cm 2
Dark Current
V DIODE = 7.5mV
2.5
pA
vs Temperature
doubles every 7
C
Capacitance
1200
pF
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
OPT101
2
5
°
°
°
199641170.103.png 199641170.105.png 199641170.106.png 199641170.107.png 199641170.108.png 199641170.109.png 199641170.110.png
OP AMP SPECIFICATIONS
At T A = +25
°
C, V S = +2.7V to +36V,
l
= 650nm, internal 1M
W
feedback resistor, and R L = 10k
W,
unless otherwise noted.
OPT101 Op Amp (1)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
INPUT
Offset Voltage
±
0.5
mV
vs Temperature
±
2.5
m
V/
C
vs Power Supply
10
m
V/V
Input Bias Current
(–) Input
165
pA
vs Temperature
(–) Input
1
pA/
°
C
Input Impedance
Differential
400 || 5
M
W
|| pF
Common-Mode
250 || 35
G
W
|| pF
Common-Mode Input Voltage Range
Linear Operation
0 to [(V S ) – 1]
V
Common-Mode Rejection
90
dB
OPEN-LOOP GAIN
Open-loop Voltage Gain
90
dB
FREQUENCY RESPONSE
Gain-Bandwidth Product (2)
2
MHz
Slew Rate
1
V/
m
s
Settling Time 1%
5.8
m
s
0.1%
7.7
m
s
0.05%
8.0
m
s
OUTPUT
Voltage Output, High
(V S ) – 1.3
(V S ) – 1.15
V
Short-Circuit Current
V S = +36V
15
mA
POWER SUPPLY
Operating Voltage Range
+2.7
+36
V
Quiescent Current
Dark, V PIN3 = 0V
120
240
m
A
R L
¥
, V OUT = 10V
220
m
A
NOTES: (1) Op amp specifications provided for information and comparison only. (2) Stable gains
³
10V/V.
®
3
OPT101
°
199641170.111.png 199641170.112.png 199641170.113.png 199641170.114.png 199641170.116.png 199641170.117.png 199641170.118.png 199641170.119.png 199641170.120.png 199641170.121.png 199641170.122.png 199641170.123.png 199641170.124.png 199641170.125.png 199641170.127.png 199641170.128.png 199641170.129.png 199641170.130.png
 
PIN CONFIGURATIONS
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
Top View
DIP
V S
1
8
Common
–In
2
7
NC
(1)
–V
3
6
NC
1M
W
Feedback
4
5
Output
NOTE: (1) Photodiode location.
Top View
SIP
Common
V S
–V
1
2
3
4
5
(1)
MOISTURE SENSITIVITY
AND SOLDERING
Clear plastic does not contain the structural-enhancing fillers
used in black plastic molding compound. As a result, clear
plastic is more sensitive to environmental stress than black
plastic. This can cause difficulties if devices have been stored
in high humidity prior to soldering. The rapid heating during
soldering can stress wire bonds and cause failures. Prior to
soldering, it is recommended that plastic devices be baked-out
at +85
1M
W
Feedback
Output
ABSOLUTE MAXIMUM RATINGS
Supply Voltage (V S to “Common” or pin 3) ................................ 0 to +36V
Output Short-Circuit (to ground) ............................................... Continuous
Operating Temperature ..................................................... –25
°
C to +85
°
C
C for 24 hours.
The fire-retardant fillers used in black plastic are not compat-
ible with clear molding compound. The OPT101 plastic
packages cannot meet flammability test, UL-94.
Storage Temperature ........................................................ –25
°
C to +85
°
C
Junction Temperature ...................................................................... +85
°
C
Lead Temperature (soldering, 10s) ................................................ +300
°
C
(Vapor-Phase Soldering Not Recommended)
PACKAGE INFORMATION
PACKAGE DRAWING
PRODUCT
COLOR
PACKAGE
NUMBER (1)
OPT101P
Clear
8-Pin Plastic DIP
006-1
006-4
OPT101W Clear 5-Pin Plastic SIP 321
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book. (2) 8-pin DIP with J-formed
leads for surface mounting.
Clear 8-Lead Surface Mount (2)
®
OPT101
4
°
OPT101P-J
199641170.131.png 199641170.132.png 199641170.133.png 199641170.134.png 199641170.135.png 199641170.002.png 199641170.003.png 199641170.004.png 199641170.005.png 199641170.006.png
TYPICAL PERFORMANCE CURVES
At T A = +25
°
C, V S = +2.7V to +36V,
l
= 650nm, internal 1M
W
feedback resistor, and R L = 10k
W,
unless otherwise noted.
NORMALIZED SPECTRAL RESPONSIVITY
VOLTAGE RESPONSIVITY vs RADIANT POWER
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
Ultraviolet
Infrared
70°C
25°C
1
650nm
(0.45A/W)
0.1
0.01
l
= 650nm
0.001
200 300 400 500 600 700 800 900 1000 1100
0.01
0.1
1
10
100
1k
Wavelength (nm)
Radiant Power (µW)
VOLTAGE RESPONSIVITY vs IRRADIANCE
VOLTAGE RESPONSIVITY vs FREQUENCY
10
10
1
1
0.1
0.1
0.01
0.01
l
= 650nm
0.001
0.001
0.001
0.01
0.1
1
10
100
100
1k
10k
100k
Frequency (Hz)
Irradiance (W/m 2 )
RESPONSE vs INCIDENT ANGLE
8
DARK V OUT vs TEMPERATURE
1.0
1.0
q
X
7.8
0.8
q X
SIP Package
q Y
0.8
q
Y
0.6
0.6
7.6
0.4
q
X
Plastic
DIP Package
q
Y
0.4
7.4
0.2
0.2
7.2
0
0
7
0
±20
±40
±60
±80
0
10
20
30
40
50
60
70
Temperature (
C)
Incident Angle (°)
®
5
OPT101
°
199641170.007.png 199641170.008.png 199641170.009.png 199641170.010.png 199641170.011.png 199641170.013.png 199641170.014.png 199641170.015.png 199641170.016.png 199641170.017.png 199641170.018.png 199641170.019.png 199641170.020.png 199641170.021.png 199641170.022.png 199641170.024.png 199641170.025.png 199641170.026.png 199641170.027.png 199641170.028.png 199641170.029.png 199641170.030.png 199641170.031.png 199641170.032.png 199641170.033.png 199641170.035.png 199641170.036.png 199641170.037.png 199641170.038.png 199641170.039.png 199641170.040.png 199641170.041.png 199641170.042.png 199641170.043.png 199641170.044.png 199641170.046.png 199641170.047.png 199641170.048.png
Zgłoś jeśli naruszono regulamin