irf7413.pdf

PD - 9.1330C

IRF7413

HEXFET ® Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

V DSS = 30V

R DS(on) = 0.011

Top View

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infra red, or wave soldering techniques. Power dissipation

of greater than 0.8W is possible in a typical PCB mount

application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

I D @ T A = 25°C

Continuous Drain Current, V GS @ 10V

I D @ T A = 70°C

Continuous Drain Current, V GS @ 10V

9.2

I DM

Pulsed Drain Current

P D @T A = 25°C

Power Dissipation

2.5

Linear Derating Factor

0.02

mW/°C

V GS

Gate-to-Source Voltage

± 20

E AS

Single Pulse Avalanche Energy

260 mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

T J, T STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R q JA Maximum Junction-to-Ambient

–––

°C/W

8/25/97

IRF7413

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V (BR)DSS

Drain-to-Source Breakdown Voltage

30 ––– –––

V GS = 0V, I D = 250µA

V (BR)DSS /

T J Breakdown Voltage Temp. Coefficient

––– 0.034 ––– V/°C Reference to 25°C, I D = 1mA

––– ––– 0.011

R DS(on)

Static Drain-to-Source On-Resistance

V GS = 10V, I D = 7.3A

––– ––– 0.018

V GS = 4.5V, I D = 3.7A

V GS(th)

Gate Threshold Voltage

1.0 ––– –––

V DS = V GS , I D = 250µA

g fs

Forward Transconductance

10 ––– –––

V DS = 10V, I D = 3.7A

I DSS

Drain-to-Source Leakage Current

––– ––– 1.0

µA

V DS = 24V, V GS = 0V

––– ––– 25

V DS = 24V, V GS = 0V, T J = 125°C

I GSS

Gate-to-Source Forward Leakage

––– ––– -100

V GS = -20V

Gate-to-Source Reverse Leakage

––– ––– 100

V GS = 20V

Q g

Total Gate Charge

––– 52

I D = 7.3A

Q gs

Gate-to-Source Charge

––– 6.1 9.2

nC V DS = 24V

Q gd

Gate-to-Drain ("Miller") Charge

––– 16

V GS = 10 V, See Fig. 6 and 9

t d(on)

Turn-On Delay Time

––– 8.6 –––

V DD = 15V

t r

Rise Time

––– 50 –––

I D = 7.3A

t d(off)

Turn-Off Delay Time

––– 52 –––

R G = 6.2

t f

Fall Time

––– 46 –––

R D = 2.0 W, See Fig. 10

C iss

Input Capacitance

––– 1800 –––

V GS = 0V

C oss

Output Capacitance

––– 680 –––

pF V DS = 25V

C rss

Reverse Transfer Capacitance

––– 240 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I S

Continuous Source Current

MOSFET symbol

––– ––– 3.1

(Body Diode)

showing the

I SM

Pulsed Source Current

integral reverse

––– ––– 58

(Body Diode)

p-n junction diode.

V SD

Diode Forward Voltage

––– ––– 1.0

T J = 25°C, I S = 7.3A, V GS = 0V

t rr

Reverse Recovery Time

––– 74 110

ns T J = 25°C, I F = 7.3A

Q rr

Reverse RecoveryCharge

––– 200 300

nC di/dt = 100A/µs

Notes:

max. junction temperature. ( See fig. 11 ) I SD £ 7.3A, di/dt £ 100A/µs, V DD £ V (BR)DSS ,

Repetitive rating; pulse width limited by

T J £ 150°C

R G = 25 W , I AS =7.3A. (See Figure 12) Pulse width £ 300µs; duty cycle £ 2%.

Surface mounted on FR-4 board, t

10sec.

Starting T J = 25°C, L =9.8mH

IRF7413

100

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

100

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

3.0V

20µs P ULSE WIDTH

T = 25°C

20µs P ULSE WIDTH

T = 150°C

0.1

V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.0

I = 7.3A

1.5

T = 150°C

T = 25°C

1.0

0.5

V = 10V

20µs PULSE W IDTH

0.0

V = 10V

3.0

3.5

4.0

4.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

V , Gate-to-Source Voltage (V)

T , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF7413

3200

V = 0V , f = 1MH z

C = C + C , C SHORTED

C = C

C = C + C

iss gs gd ds

rss gd

oss ds gd

I = 7.3A

2800

V = 24V

V = 15V

C iss

2400

2000

C oss

1600

1200

800

C rss

400

FOR TEST CIRCUIT

SEE FIG URE 9

100

1 0

2 0

3 0

4 0

5 0

6 0

V , Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

1000

OPERATION IN THIS AREA LIMITED

BY R DS(on)

T = 25°C

T = 150°C

100

100us

1ms

= 25 C

10ms

= 150 C

Single Pulse

V = 0V

0.1

100

0.4

1.2

2.0

2.8

3.6

V , Drain-to-Source Voltage (V)

V , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

IRF7413

R D

V DS

Q G

10V

V GS

D.U.T.

Q GS

Q GD

R G

V DD

V G

10V

Pulse Width

£ 1

µs

Charge

Duty Factor

£ 0.1 %

Fig 9a. Basic Gate Charge Waveform

Fig 10a. Switching Time Test Circuit

Current Regulator

Same Type as D.U.T.

50K

V DS

90%

12V

.3 m F

D.U.T.

V DS

V GS

10%

V GS

3mA

t d(on) t r

t d(off) t f

I G

I D

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P

1 2

x Z

thJA

+ T

0.1

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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