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tcst1000-2000
TCST1000/ TCST2000
Vishay Telefunken
Transmissive Optical Sensor without Aperture
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.
B)
Applications
A)
Contactless optoelectronic switch,
control and counter
15134
Features
95 10795
A
+
E
Compact construction
No setting efforts
2 case variations
Polycarbonate case protected against
ambient light
C urrent T ransfer R atio (CTR) of typical 2.5%
C
+
C
5.50
0.22”
Top view
Order Instruction
Ordering Code
Resolution (mm) / Aperture (mm)
Remarks
TCST1000 A)
0.6 / non
No mounting flags
TCST2000 B)
0.6 / non
With two mounting flags
Document Number 83762
Rev. A3, 08–Jun–99
www.vishay.com
1 (8)
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TCST1000/ TCST2000
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V R
6
V
Forward current
I F
60
mA
Forward surge current
t p
3
10 s
I FSM
3
A
Power dissipation
T amb
3
25 C
P V
100
mW
Junction temperature
T j
100
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V CEO
70
V
Emitter collector voltage
V ECO
7
V
Collector current
I C
100
mA
Collector peak current
t p /T = 0.5, t p
3
10 ms
I CM
200
mA
Power dissipation
T amb
3
25 C
P V
150
mW
Junction temperature
T j
100
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Total power dissipation
T amb
3
25 C
P tot
250
mW
Ambient temperature range
T amb
–55 to +85
C
Storage temperature range
T stg
–55 to +100
C
Soldering temperature
2 mm from case, t
3
5 s
T sd
260
C
Electrical Characteristics (T amb = 25 ° C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I F = 60 mA
V F
1.25
1.5
V
Junction capacitance
V R = 0, f = 1 MHz
C j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I C = 1 mA
V CEO
70
V
Emitter collector voltage
I E = 10 A
V ECO
7
V
Collector dark current
V CE = 25 V, I F = 0, E = 0
I CEO
100
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector current
V CE = 5 V, I F = 20 mA
I C
0.25
0.5
mA
Collector emitter saturation
voltage
I F = 20 mA, I C = 25 A
V CEsat
0.4
V
Resolution, path of the
shutter crossing the radiant
sensitive zone
I Crel = 10/90%
0.6
mm
www.vishay.com
2 (8)
Document Number 83762
Rev. A3, 08–Jun–99
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TCST1000/ TCST2000
Vishay Telefunken
Switching Characteristics
Parameter
Test Conditions
Symbol
Typ.
Unit
Turn-on time
V S = 5 V, I C = 1 mA, R L = 100 (see figure 1)
t on
15.0
s
S
C
L
(
g
)
Turn-off time
t off
10.0
s
0
I F
I F
+ 5 V
I C = 2 mA; adjusted through
input amplitude
I F
96 11698
R G = 50
t p
0
t
= 0.01
t p
T
t p = 50 s
I C
Channel I
Oscilloscope
R L 1 M
C L 20 pF
100%
Channel II
90%
50 100
95 10890
Figure 1. Test circuit
10%
0
t
t r
t d
t s
t f
t on
t off
t p
pulse duration
t s
storage time
t d
delay time
t f
fall time
t r
rise time
t off (= t s + t f )
turn-off time
t on (= t d + t r )
turn-on time
Figure 2. Switching times
Document Number 83762
Rev. A3, 08–Jun–99
www.vishay.com
3 (8)
199623290.006.png 199623290.007.png 199623290.008.png 199623290.009.png 199623290.010.png 199623290.011.png 199623290.012.png 199623290.013.png 199623290.014.png
TCST1000/ TCST2000
Vishay Telefunken
Typical Characteristics (T amb = 25 C, unless otherwise specified)
400
10000
300
1000
V CE =25V
I F =0
Coupled device
200
100
Phototransistor
100
IR-diode
10
0
1
0
30
60
90
120
150
0
25
50
75
100
95 11088
T amb – Ambient Temperature (
°
C )
95 11090
T amb – Ambient Temperature (
°
C )
Figure 3. Total Power Dissipation vs.
Ambient Temperature
Figure 6. Collector Dark Current vs. Ambient Temperature
1000.0
10
V CE =5V
100.0
1
10.0
0.1
1.0
0.01
0.1
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F – Forward Voltage ( V )
0.1
1
10
100
96 11862
95 11083
I F – Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Collector Current vs. Forward Current
2.0
10
V CE =5V
I F =20mA
I F =50mA
1.5
1
20mA
1.0
10mA
0.1
5mA
0.5
2mA
0
0.01
–25
0
25
50
75
100
0.1
1
10
100
95 11089
T amb – Ambient Temperature ( °C )
95 11084
V CE – Collector Emitter Voltage ( V )
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 8. Collector Current vs. Collector Emitter Voltage
www.vishay.com
4 (8)
Document Number 83762
Rev. A3, 08–Jun–99
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TCST1000/ TCST2000
Vishay Telefunken
100
110
V CE =5V
100
90
0
80
10
70
s
60
50
1
40
30
20
10
0.1
0
0.1
1
10
100
–0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5
s – Displacement ( mm )
95 11085
I F – Forward Current ( mA )
15141
Figure 9. Current Transfer Ratio vs. Forward Current
Figure 11. Relative Collector Current vs. Displacement
20
15
Non Saturated
Operation
V S =5V
R L =100
10
t on
5
t off
0
0
2
4 6
I C – Collector Current ( mA )
8
10
95 11086
Figure 10. Turn on / off Time vs. Collector Current
Document Number 83762
Rev. A3, 08–Jun–99
www.vishay.com
5 (8)
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