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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
l Rugged Triple-Diffused Planar Construction
SOT-93 PACKAGE
(TOP VIEW)
l 15 A Continuous Collector Current
l 1000 Volt Blocking Capability
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (V BE = 0 V)
BUV48
BUV48A
V CES
850
1000
V
Collector-emitter voltage (R BE = 10 W )
BUV48
BUV48A
V CER
850
1000
V
Collector-emitter voltage (I B = 0)
BUV48
BUV48A
V CEO
400
450
V
Continuous collector current
I C
15
A
Peak collector current (see Note 1)
I CM
30
A
Continuous base current
I B
4
A
Peak base current
I BM
20
A
Non repetitive accidental peak surge current
I CSM
55
A
Continuous device dissipation at (or below) 25°C case temperature
P tot
125
W
Operating junction temperature range
T j
-65 to +150
°C
Storage temperature range
T stg
-65 to +150
°C
NOTE 1: This value applies for t p £ 2 ms, duty cycle £ 2%.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
V CEO(sus)
Collector-emitter
sustaining voltage
I C = 200 mA
L = 25 mH
(see Note 2)
BUV48
BUV48A
400
450
V
I CES
Collector-emitter
cut-off current
V CE = 850 V
V CE = 1000 V
V CE = 850 V
V CE = 1000 V
V BE = 0
V BE = 0
V BE = 0
V BE = 0
T C = 125°C
T C = 125°C
BUV48
BUV48A
BUV48
BUV48A
0.2
0.2
2.0
2.0
mA
I CER
Collector-emitter
cut-off current
V CE = 850 V
V CE = 1000 V
V CE = 850 V
V CE = 1000 V
R BE = 10 W
R BE = 10 W
R BE = 10 W
R BE = 10 W
T C = 125°C
T C = 125°C
BUV48
BUV48A
BUV48
BUV48A
0.5
0.5
4.0
4.0
mA
I EBO
Emitter cut-off
current
V EB = 5 V
I C = 0
1
mA
V EBO
Emitter-base
breakdown voltage
I E = 50 mA
I C = 0
7
30
V
V CE(sat)
Collector-emitter
saturation voltage
I B = 2 A
I B = 3 A
I B = 1.6 A
I B = 2.4 A
I C = 10 A
I C = 15 A
I C = 8 A
I C = 12 A
(see Notes 3 and 4)
BUV48
BUV48
BUV48A
BUV48A
1.5
5.0
1.5
5.0
V
V BE(sat)
Base-emitter
saturation voltage
I B = 2 A
I B = 1.6 A
I C = 10 A
I C = 8 A
(see Notes 3 and 4)
BUV48
BUV48A
1.6
1.6
V
f t
Current gain
bandwidth product
V CE = 10 V I C = 0.5 A
f = 1 MHz
10
MHz
C ob
Output capacitance
V CB = 20 V I C = 0
f = 1 MHz
150
pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle £ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
MIN
TYP MAX
UNIT
R q JC
Junction to case thermal resistance
1
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
MIN
TYP MAX
UNIT
t on
Turn on time
I C = 10 A
I B(on) = 2 A
V CC = 150 V
I B(off) = -2 A
BUV48
(see Figures 1 and 2)
1.0
µs
t s
Storage time
3.0
µs
t f
Fall time
0.8
µs
t on
Turn on time
I C = 8 A
I B(on) = 1.6 A
V CC = 150 V
I B(off) = -1.6 A
BUV48A
(see Figures 1 and 2)
1.0
µs
t s
Storage time
3.0
µs
t f
Fall time
0.8
µs
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
inductive-load-switching characteristics at 100°C case temperature
PARAMETER
TEST CONDITIONS †
MIN
TYP MAX
UNIT
t sv
Voltage storage time
I C = 10 A
V BE(off) = -5 V
I B(on) = 2 A
(see Figures 3 and 4)
BUV48
4.0
µs
t fi
Current fall time
0.4
µs
t sv
Voltage storage time
I C = 8 A
V BE(off) = -5 V
I B(on) = 1.6 A
(see Figures 3 and 4)
BUV48A
4.0
µs
t fi
Current fall time
0.4
µs
PRODUCT INFORMATION
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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 F
m
T
120 W
100 W
V 1
100
m
F
V cc = 250 V
47 W
t p
TUT
15 W
V 1
100 W
82 W
680 F
m
BD136
t p = 20 m s
Duty cycle = 1%
V 1 = 15 V, Source Impedance = 50 W
Figure 1. Resistive-Load Switching Test Circuit
C
90%
90%
E
I C
A - B = t d
B - C = t r
E - F = t f
D - E = t s
A - C = t on
D - F = t off
B
10%
10%
F
0%
dI B
dt
‡ 2 A/ m s
90%
D
I B
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
PRODUCT INFORMATION
3
V CC
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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
33 W
+5V
D45H11
BY205-400
BY205-400
RB (on)
33 W
1 pF
180
m H
v cc
V Gen
1 k W
2N2222
68 W
0.02 m F
TUT
BY205-400
1 k W
V clamp = 400 V
+5V
270 W
BY205-400
1 k W
5X BY205-400
2N2904
Adjust pw to obtain I C
D44H11
47 W
For I C < 6 A V CC = 50 V
For I C ‡ 6 A V CC = 100 V
100 W
V BE(off)
Figure 3. Inductive-Load Switching Test Circuit
I B(on)
I B
A (90%)
A - B = t sv
B - C = t rv
D - E = t fi
E - F = t ti
B - E = t xo
Base Current
C
90%
V CE
B
10%
Collector Voltage
D (90%)
E (10%)
I C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, R in > 10 W , C in < 11.5 pF.
B. Resistors must be noninductive types.
Figure 4. Inductive-Load Switching Waveforms
PRODUCT INFORMATION
4
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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AA
TCP765AB
100
5·0
V CE = 5 V
T C = 125°C
T C = 25°C
T C = -65°C
I C = 5 A
I C = 10 A
I C = 15 A
T C = 25°C
4·0
3·0
10
2·0
1·0
1·0
0
0·1
1·0
10
20
0·1
1·0
10
I C - Collector Current - A
I B - Base Current - A
Figure 5.
Figure 6.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AI
TCP765AC
5·0
1·6
I C = 5 A
I C = 10 A
I C = 15 A
1·5
4·0
I C = 15 A
T C = 100°C
1·4
3·0
1·3
I C = 10 A
1·2
2·0
1·1
1·0
I C = 5 A
1·0
0·9
0
0·1
1·0
10
0·8
0
1
2
3
4
5
6
I B - Base Current - A
I B - Base Current - A
Figure 7.
Figure 8.
PRODUCT INFORMATION
5
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