buv47.pdf

BUV47, BUV47A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

l Rugged Triple-Diffused Planar Construction

SOT-93 PACKAGE

(TOP VIEW)

l 9 A Continuous Collector Current

l 1000 Volt Blocking Capability

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

Collector-emitter voltage (V BE = -2.5 V)

BUV47

BUV47A

V CEX

850

1000

Collector-emitter voltage (R BE = 10 W )

BUV47

BUV47A

V CER

850

1000

Collector-emitter voltage (I B = 0)

BUV47

BUV47A

V CEO

400

450

Continuous collector current

I C

Peak collector current (see Note 1)

I CM

Continuous base current

I B

Peak base current

I BM

Continuous device dissipation at (or below) 25°C case temperature

P tot

120

Operating junction temperature range

T j

-65 to +150

°C

Storage temperature range

T stg

-65 to +150

°C

NOTE 1: This value applies for t p £ 5 ms, duty cycle £ 2%.

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

BUV47, BUV47A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

V CEO(sus)

Collector-emitter

sustaining voltage

I C = 200 mA

L = 25 mH

(see Note 2)

BUV47

BUV47A

400

450

V (BR)EBO

Base-emitter

breakdown voltage

I E = 50 mA

I C = 0

(see Note 3)

I CES

Collector-emitter

cut-off current

V CE = 850 V

V CE = 1000 V

V CE = 850 V

V CE = 1000 V

V BE = 0

T C = 125°C

BUV47

BUV47A

BUV47

BUV47A

0.15

1.5

I CER

Collector-emitter

cut-off current

V CE = 850 V

V CE = 1000 V

V CE = 850 V

V CE = 1000 V

R BE = 10 W

T C = 125°C

BUV47

BUV47A

BUV47

BUV47A

0.4

3.0

I EBO

Emitter cut-off

current

V EB = 5 V

I C = 0

V CE(sat)

Collector-emitter

saturation voltage

I B = 1 A

I B = 2.5 A

I C = 5 A

I C = 8 A

(see Notes 3 and 4)

1.5

3.0

V BE(sat)

Base-emitter

saturation voltage

I B = 1 A

I C = 5 A

(see Notes 3 and 4)

1.6

f t

Current gain

bandwidth product

V CE = 10 V I C = 0.5 A

f = 1 MHz

MHz

C ob

Output capacitance

V CB = 20 V I C = 0

f = 0.1 MHz

105

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle £ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

MIN

TYP MAX

UNIT

R q JC

Junction to case thermal resistance

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

MIN

TYP MAX

UNIT

t on

Turn on time

I C = 5 A

V CC = 150 V

I B(on) = 1 A

(see Figures 1 and 2)

I B(off) = -1 A

1.0

µs

t s

Storage time

3.0

µs

t f

Fall time

0.8

µs

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS †

MIN

TYP MAX

UNIT

t sv

Voltage storage time

I C = 5 A

T C = 100°C

I B(on) = 1 A

(see Figures 3 and 4)

V BE(off) = -5 V

4.0

µs

t fi

Current fall time

0.4

µs

PRODUCT INFORMATION

BUV47, BUV47A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

+25 V

BD135

680 F

120 W

100 W

V 1

100

V cc = 250 V

47 W

t p

TUT

15 W

V 1

100 W

82 W

680 F

BD136

t p = 20 m s

Duty cycle = 1%

V 1 = 15 V, Source Impedance = 50 W

Figure 1. Resistive-Load Switching Test Circuit

90%

I C

A - B = t d

B - C = t r

E - F = t f

D - E = t s

A - C = t on

D - F = t off

10%

dI B

‡ 2 A/ m s

90%

I B

I B(on)

10%

I B(off)

Figure 2. Resistive-Load Switching Waveforms

PRODUCT INFORMATION

V CC

BUV47, BUV47A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

33 W

+5V

D45H11

BY205-400

RB (on)

33 W

1 pF

180

m H

v cc

V Gen

1 k W

2N2222

68 W

0.02 m F

TUT

BY205-400

1 k W

V clamp = 400 V

+5V

270 W

BY205-400

1 k W

5X BY205-400

2N2904

Adjust pw to obtain I C

D44H11

47 W

For I C < 6 A V CC = 50 V

For I C ‡ 6 A V CC = 100 V

100 W

V BE(off)

Figure 3. Inductive-Load Switching Test Circuit

I B(on)

I B

A (90%)

A - B = t sv

B - C = t rv

D - E = t fi

E - F = t ti

B - E = t xo

Base Current

90%

V CE

10%

Collector Voltage

D (90%)

E (10%)

I C(on)

Collector Current

F (2%)

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, R in > 10 W , C in < 11.5 pF.

B. Resistors must be noninductive types.

Figure 4. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

BUV47, BUV47A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE

BASE CURRENT

TCP762AA

TCP762AB

100

5·0

V CE = 5 V

T C = 125°C

T C = 25°C

T C = -65°C

T C = 25°C

I C = 8 A

I C = 6 A

I C = 4 A

I C = 2 A

4·0

3·0

2·0

1·0

0·1

1·0

0·5

1·0

1·5

2·0

2·5

I C - Collector Current - A

I B - Base Current - A

Figure 5.

Figure 6.

COLLECTOR-EMITTER SATURATION VOLTAGE

BASE CURRENT

COLLECTOR CUT-OFF CURRENT

CASE TEMPERATURE

TCP762AK

T C = 100°C

I C = 8 A

I C = 6 A

I C = 4 A

I C = 2 A

TCP762AC

0·5

0·4

1·0

0·3

BUV47A

V CE = 1000 V

0·1

0·2

BUV47

V CE = 850 V

0·01

0·1

0·5

1·0

1·5

2·0

2·5

0·001

-80 -60 -40 -20 0 20 40 60 80 100 120 140

I B - Base Current - A

T C - Case Temperature - °C

Figure 7.

Figure 8.

PRODUCT INFORMATION

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