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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW76
HF/VHF power transistor
Product specification
File under Discrete Semiconductors, SC08a
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
DESCRIPTION
mismatch conditions. Transistors are
delivered in matched h
FE
groups.
The transistor has a
1
N-P-N silicon planar epitaxial
transistor intended for use in class-AB
or class-B operated high power
transmitters in the h.f. and v.h.f.
bands. The transistor presents
excellent performance as a linear
amplifier in the h.f. band. It is
resistance stabilized and is
guaranteed to withstand severe load
¤
2
" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
C
MODE OF OPERATION
V
CE
V
I
C(ZS)
A
f
MHz
P
L
W
G
p
dB
%
d
3
dB
s.s.b. (class-AB)
28
0,05
1,6
-
28 8
-
80 (P.E.P.)
>
13
>
35
(1)
<-
30
c.w. (class-B)
28
-
108
80
typ. 7,9
typ. 70
-
Note
1. At 80 W P.E.P.
PIN CONFIGURATION
PINNING - SOT121B.
PIN
DESCRIPTION
handbook, halfpage
1
4
1
collector
2
emitter
3
base
4
emitter
2
3
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
°
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
V
CESM
max.
70 V
Collector-emitter voltage (open base)
V
CEO
max.
35 V
Emitter-base voltage (open collector)
V
EBO
max.
4 V
Collector current (average)
I
C(AV)
max.
8 A
Collector current (peak value); f
>
1 MHz
I
CM
max.
20 A
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°
C
P
rf
max.
140 W
Storage temperature
T
stg
-
65 to
+
150
°
C
Operating junction temperature
T
j
max.
200
°
C
MGP499
MGP500
10
200
handbook, halfpage
handbook, halfpage
P
rf
(W)
III
I
C
(A)
150
II
T
h
= 70
°
C
T
mb
= 25
°
C
derate by 0.77 W/K
100
I
50
derate by 0.56 W/K
1
0
1
10
10
2
0
50
100
V
CE
(V)
T
h
(
°
C)
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; V
CE
£
28 V; f
>
1 MHz.
THERMAL RESISTANCE
(dissipation = 60 W; T
mb
=82
°
C, i.e. T
h
=70
C)
From junction to mounting base (d.c. dissipation)
R
th j-mb(dc)
=
1,92 K/W
From junction to mounting base (r.f. dissipation)
R
th j-mb(rf)
=
1,33 K/W
From mounting base to heatsink
R
th mb-h
=
0,2 K/W
August 1986
3
°
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
CHARACTERISTICS
T
j
=25
°
C unless otherwise specified
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 50 mA
V
(BR) CES
>
70 V
Collector-emitter breakdown voltage
open base; I
C
= 50 mA
V
(BR) CEO
>
35 V
Emitter-base breakdown voltage
open collector; I
E
= 10 mA
V
(BR)EBO
>
4V
Collector cut-off current
V
BE
= 0; V
CE
= 35 V
I
CES
<
10 mA
D.C. current gain
(1)
I
C
= 4 A; V
CE
=5 V
h
FE
15 to 80
D.C. current grain ratio of matched devices
(1)
I
C
= 4 A; V
CE
=5 V
h
FE1
/h
FE2
<
1,2
Collector-emitter saturation voltage
(1)
I
C
= 12,5 A; I
B
= 2,5 A
V
CEsat
typ.
2,5 V
Transition frequency at f = 100 MHz
(2)
-
I
E
= 4 A; V
CB
= 28 V
f
T
typ.
315 MHz
-
I
E
= 12,5 A; V
CB
= 28 V
f
T
typ.
305 MHz
Collector capacitance at f = 1 MHz
I
E
=I
e
= 0; V
CB
= 28 V
C
c
typ.
125 pF
Feedback capacitance at f = 1 MHz
I
C
= 50 mA; V
CE
= 28 V
C
re
typ.
85 pF
Collector-flange capacitance
C
cf
typ.
3 pF
Notes
1. Measured under pulse conditions: t
p
£
300
m
s;
d£
0,02.
2. Measured under pulse conditions: t
p
£
50
m
s;
d£
0,01.
MGP501
10
handbook, halfpage
I
C
(A)
T
h
= 70
C
25
°
C
1
10
-
1
10
-
2
Fig.4 Typical values; V
CE
= 20 V.
0.5
1
1.5
2
V
BE
(V)
August 1986
4
°
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
MGP502
MGP503
60
600
handbook, halfpage
handbook, halfpage
h
FE
V
CE
= 28 V
C
c
(pF)
40
400
5 V
20
200
typ
0
0
0
10
I
C
(A)
20
0
20
V
CB
(V)
40
Fig.5 Typical values; T
j
=25
°
C.
Fig.6 I
E
=I
e
= 0; f = 1 MHz; T
j
= 25
°
C.
600
MGP504
handbook, full pagewidth
f
T
(MHz)
400
typ
200
0
0
5
10
15
20
-
I
E
(A)
Fig.7 V
CB
= 28 V; f = 100 MHz; T
j
=25
°
C.
August 1986
5
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