2SC5339.pdf

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2SC5339
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5339
HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM
RESOLUTION DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
High Voltage
: V CBO = 1500 V
Low Saturation Voltage : V CE (sat) = 5 V (Max.)
: t f = 0.2 µs (Typ.)
Bult−in Damper Type
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Base Voltage
V CBO
1500
V
Collector−Emitter Voltage
V CEO
600
V
Emitter−Base Voltage
V EBO
5
V
Collector Current
DC
I C
7
A
JEDEC ―
Pulse
I CP
14
Base Current
I B
3.5
A
JEITA
―
Collector Power Dissipation
P C
50
W
TOSHIBA
2-16E3A
Junction Temperature
T j
150
°C
Weight: 5.5 g (typ.)
Storage Temperature Range
T stg −55~150
°C
EQUIVALENT CIRCUIT
1
2001-08-21
High Speed
Collector Metal (Fin) is Fully Covered with Mold Resin.
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2SC5339
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
Collector Cut−off Current
I CBO
V CB = 1500 V, I E = 0
― ―
1
mA
Emitter Cut−off Current
I EBO
V EB = 5 V, I C = 0
71 ―
250
mA
Emitter−Base Breakdown Voltage
V (BR) EBO I E = 400 mA, I C = 0
5 ― ―
V
DC Current Gain
h FE (1)
CE = 5 V, I C = 1 A
10 ―
30
―
h FE (2)
CE = 5 V, I C = 5 A
4 ―
8
Collector−Emitter Saturation Voltage
V CE (sat) I C = 5 A, I B = 1.25 A
― ―
5
V
Base−Emitter Saturation Voltage
V BE (sat) I C = 5 A, I B = 1.25 A
―
1.0
1.3
V
Forward Voltage (Damper Diode)
V F
I F = 5 A
―
1.35
1.8
V
Transition Frequency
f T
V CE = 10 V, I C = 0.1 A
―
2.4 ―
MHz
Collector Output Capacitance
Cob
V CB = 10 V, I E = 0, f = 1 MHz ―
82 ―
pF
Storage Time
t stg
I CP = 5 A, I B1 (end) = 1.1 A
f H = 31.5 kHz
―
4
6
Switching Time
µs
Fall Time
t f
―
0.2
0.5
2
2001-08-21
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