stp2n60_tranzystor.pdf

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OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STP2N60
STP2N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
V DSS
R DS(on)
I D
STP2N60
STP2N60FI
600 V
600 V
<3.5
W
2.9 A
2.2 A
<3.5
W
n
TYPICAL R DS(on) = 3.2
W
AVALANCHE RUGGED TECHNOLOGY
n
n
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100 o C
n
3
APPLICATION ORIENTED
CHARACTERIZATION
3
n
2
2
1
1
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
TO-220
ISOWATT220
n
SWITCH MODE POWER SUPPLIES (SMPS)
n
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP2N60
STP2N60FI
V DS
Drain-source Voltage (V GS =0)
600
V
V DG R
Drain- gate Voltage (R GS =20k
W
)
600
V
V GS
Gate-source Voltage
±
20
V
I D
Drain Current (continuous) at T c =25 o C
2.9
2.2
A
I D
Drain Current (continuous) at T c =100 o C
1.7
1.3
A
I DM (
•
) Drain Current (pulsed)
11
11
A
P tot
Total Dissipation at T c =25 o C
70
35
W
Derating Factor
0.56
0.28
W/ o C
V ISO
Insulation Withstand Voltage (DC)
'
2000
V
T stg
Storage Temperature
-65 to 150
o
C
T j
Max. Operating Junction Temperature
150
o C
(
•
) Pulse width limited by safe operating area
December 1996
1/10
11722023.002.png
STP2N60/FI
THERMAL DATA
TO-220
ISOWATT220
R thj-case Thermal Resistance Junction-case
Max
1.78
3.57
o C/W
R thj-amb
R t hc- sin k
T l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o C/W
o C/W
o C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max,
2.9
A
d
<1%)
E AS
Single Pulse Avalanche Energy
(starting T j =25 o C, I D =I AR ,V DD =50V)
105
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max,
3.5
mJ
d
<1%)
I AR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
1.7
A
o C, pulse width limited by T j max,
d
<1%)
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D =250
A GS = 0
600
V
I DSS
Zero Gate Voltage
Drain Current (V GS =0)
V DS =MaxRating
V DS = Max Rating x 0.8 T c =125 o C
25
250
m
A
m
A
I GSS
Gate-body Leakage
Current (V DS =0)
V GS =
±
20 V
±
100
nA
ON (
*
)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V GS(th) Gate Threshold Voltage V DS =V GS I D =250
m
A
2
3
4
V
R DS(on) Static Drain-source On
Resistance
V GS =10V I D = 1.5 A
3.2
3.5
W
I D(on)
On State Drain Current V DS >I D(on) xR DS(on)max
V GS =10V
2.9
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
g fs (
*
)
r rd
Transconductance
V DS >I D(on) xR DS(on)max I D =1.5A
1
2.4
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS =25V f=1MHz V GS =0
450
62
23
600
85
35
pF
pF
pF
2/10
m
11722023.003.png
STP2N60/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
t d(on)
t r
Turn-on Time
Rise Time
V GS =10V
(see test circuit, figure 3)
W
25
110
40
150
ns
ns
(di/dt) on Turn-on Current Slope V DD =480V I D =2.9A
R G =50
75
A/
m
s
V GS =10V
(see test circuit, figure 5)
W
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 480 V I D =2.9A V GS =10V
33
7
13
45
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
t r(Voff)
t f
t c
Off-voltage Rise Time
Fall Time
Cross-over Time
V GS =10V
(see test circuit, figure 5)
W
70
20
100
95
30
130
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
I SD
I SD M (
•
)
Source-drain Current
Source-drain Current
(pulsed)
2.9
11
A
A
V SD (
*
) Forward On Voltage
I SD =2.9A V GS =0
2
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD =2.9A di/dt=100A/
m
s
500
ns
V DD =80V T j =150 o C
(see test circuit, figure 5)
Q rr
7
m
C
I RRM
28
A
(
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
V DD =35V I D =2A
R G =50
V DD =480V I D =2.9A
R G =50
11722023.004.png
STP2N60/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
11722023.005.png
STP2N60/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
11722023.001.png

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