bs108rev1.pdf

BS108

Preferred Device

Small Signal MOSFET

250 mAmps, 200 Volts, Logic

Level

N–Channel TO–92

This MOSFET is designed for high voltage, high speed switching

applications such as line drivers, relay drivers, CMOS logic,

microprocessor or TTL to high voltage interface and high voltage

display drivers.

•

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Low Drive Requirement, V GS = 3.0 V max

250 mAMPS

200 VOLTS

R DS(on) = 8

•

Inherent Current Sharing Capability Permits Easy Paralleling of

many Devices

N–Channel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

V DSS

200

Vdc

Gate–Source Voltage

V GS

Vdc

Drain Current

Continuous (Note 1.)

Pulsed (Note 2.)

mAdc

I D

I DM

250

500

Total Power Dissipation

@ T A = 25

P D

Derate above T A = 25

350

6.4

mW/

TO–92

CASE 29

Style 30

Operating and Storage Temperature

Range

T J , T stg

–55 to

+150

° C

1 2 3

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

MARKING DIAGRAM

& PIN ASSIGNMENT

BS108

YWW

Drain

Source

Gate

= Year

= Work Week

ORDERING INFORMATION

Device

Package

Shipping

BS108

TO–92

1000 Units/Box

BS108ZL1

TO–92

2000 Ammo Pack

Preferred devices are recommended choices for future use

and best overall value.

W Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 1

Publication Order Number:

BS108/D

BS108

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(V GS = 0, I D = 10

V (BR)DSS

Vdc

200

–

Zero Gate Voltage Drain Current

(V DSS = 130 Vdc, V GS = 0)

I DSS

nAdc

–

Gate–Body Leakage Current

(V GS = 15 Vdc, V DS = 0)

I GSSF

nAdc

–

ON CHARACTERISTICS (2)

Gate Threshold Voltage

(I D = 1.0 mA, V DS = V GS )

V GS(th)

Vdc

0.5

–

1.5

Static Drain–to–Source On–Resistance

(V GS = 2.0 Vdc, I D = 50 mA)

(V GS = 2.8 Vdc, I D = 100 mA)

r DS(on)

Ohms

–

8.0

Drain Cutoff Current

(V GS = 0.2 V, V DS = 70 V)

I DSX

–

DYNAMIC CHARACTERISTICS

Input Capacitance

(V DS = 25 V, V GS = 0, f = 1.0 MHz)

C iss

–

150

Output Capacitance

(V DS = 25 V, V GS = 0, f = 1.0 MHz)

C oss

–

Reverse Transfer Capacitance

(V DS = 25 V, V GS = 0, f = 1.0 MHz)

C rss

–

SWITCHING CHARACTERISTICS

Turn–On Time (See Figure 1)

t d(on)

–

Turn–Off Time (See Figure 1)

t d(off)

–

2. Pulse Test: Pulse Width 3 300 m s, Duty Cycle = 2.0%.

RESISTIVE SWITCHING

+25 V

TO SAMPLING SCOPE

50 W INPUT

t on

t off

PULSE GENERATOR

V in

20 dB

50 W ATTENUATOR

V out

90%

40 pF

OUTPUT

INVERTED

V out

10%

1.0 M

90%

10 V

50%

PULSE

WIDTH

50%

INPUT

V in

10%

Figure 1. Switching Test Circuit

Figure 2. Switching Waveforms

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BS108

PACKAGE DIMENSIONS

TO–92

CASE 29–11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

INCHES

MILLIMETERS

DIM MIN MAX MIN MAX

A 0.175

0.205

4.45

5.20

B 0.170

0.210

4.32

5.33

C 0.125

0.165

3.18

4.19

D 0.016

0.021

0.407

0.533

G 0.045

0.055

1.15

1.39

H 0.095

0.105

2.42

2.66

J 0.015

0.020

0.39

0.50

K 0.500

---

12.70

---

L 0.250

---

6.35

---

N 0.080

0.105

2.04

2.66

SECTION X–X

P ---

0.100

---

2.54

R 0.115

---

2.93

---

V 0.135

---

3.43

---

STYLE 30:

PIN 1. DRAIN

2. GATE

3. SOURCE

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BS108

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

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BS108/D

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