PBYL1025B_SERIES_3.PDF
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Rectifier diodes Schottky barrier
Philips Semiconductors
Product specification
Schottky barrier
PBYL1025B series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R
= 20 V/ 25 V
• Reverse surge capability
• High thermal cycling performance
k
a
I
F(AV)
= 10 A
tab
3
• Low thermal resistance
V
F
£
0.4 V
GENERAL DESCRIPTION
PINNING
SOT404
Schottky rectifier diodes intended
PIN
DESCRIPTION
tab
for use as output rectifiers in low
voltage, high frequency switched
1
no connection
mode power supplies.
2
cathode
1
The PBYL1025B series is supplied
in the SOT404 surface mounting
3
anode
package.
2
tab
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYL10
20B
25B
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage T
mb
£
119 ˚C
-
20
25
V
I
F(AV)
Average rectified forward
square wave;
d
= 0.5; T
mb
£
132 ˚C
-
10
A
current
I
FRM
Repetitive peak forward
square wave;
d
= 0.5; T
mb
£
132 ˚C
-
20
A
current
I
FSM
Non-repetitive peak forward t = 10 ms
-
130
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
1
it is not possible to make connection to pin 2 of the SOT428 package
October 1998
1
Rev 1.100
Rectifier diodes
Philips Semiconductors
Product specification
Schottky barrier
PBYL1025B series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
3
K/W
to mounting base
R
th j-a
Thermal resistance junction pcb mounted, minimum footprint, FR4
-
50
-
K/W
to ambient
board
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V
F
Forward voltage
I
F
= 10 A; T
j
= 150˚C
-
0.33 0.4
V
I
F
= 10 A; T
j
= 125˚C
-
0.39 0.45
V
I
F
= 20 A; T
j
= 125˚C
-
0.54 0.61
V
I
F
= 20 A
-
0.57 0.64
V
I
R
Reverse current
V
R
= V
RWM
-
0.2
5
mA
V
R
= V
RWM
; T
j
= 100˚C
-
15
30
mA
C
d
Junction capacitance
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
-
580
-
pF
October 1998
2
Rev 1.100
Rectifier diodes
Philips Semiconductors
Product specification
Schottky barrier
PBYL1025B series
10
Forward dissipation, PF (W)
PBYL1025
Tmb(max) / C
120
100mA
Reverse current, IR (A)
PBYR725D
Vo = 0.29 V
Rs = 0.016 Ohms
125 C
8
126
10mA
D = 1.0
100 C
6
0.5
132
1mA
75 C
0.2
0.1
50 C
4
138
100uA
I
t
p
D =
t
p
T
Tj = 25 C
2
144
10uA
T
t
150
0
1uA
0
5
10
15
0
5
10
15
20
25
Average forward current, IF(AV) (A)
Reverse voltage, VR (V)
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
Ö
D.
Fig.4. Typical reverse leakage current; I
R
= f(V
R
);
parameter T
j
Forward dissipation, PF (W)
Vo = 0.29 V
Rs = 0.016 Ohms
PBYL1025
Tmb(max) / C
10000
Junction capacitance, Cd (pF)
PBYR725D
8
126
7
6
a = 1.57
132
1.9
2.2
5
4
2.8
4
138
1000
3
2
144
1
0
0
2
4
6
8
10
150
100
1
10
100
Average forward current, IF(AV) (A)
Reverse voltage, VR (V)
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
Ö
D.
Fig.5. Typical junction capacitance; C
d
= f(V
R
);
f = 1 MHz; T
j
= 25˚C to 125 ˚C.
15
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
PBYR725D
10
Transient thermal impedance, Zth j-mb (K/W)
typ
1
10
max
0.1
5
t
p
0.01
P
t
p
D =
D
T
T
t
0.001
0
0
0.2
0.4
0.6
0.8
1
1us
10us 100us 1ms 10ms 100ms 1s
10s
Forward voltage, VR (V)
pulse width, tp (s)
PBYL1025
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; Z
th j-mb
= f(t
p
).
October 1998
3
Rev 1.100
Rectifier diodes
Philips Semiconductors
Product specification
Schottky barrier
PBYL1025B series
MECHANICAL DATA
Dimensions in mm
10.3 max
4.5 max
1.4 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.7. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.8. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.100
Rectifier diodes
Philips Semiconductors
Product specification
Schottky barrier
PBYL1025B series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Ó
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
5
Rev 1.100
Rectifier diodes
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
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