BF966S (Vishay).pdf

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BF966S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially UHF-tuners.
Features
Integrated gate protection diodes
High AGC-range
Low feedback capacitance
Low noise figure
Low input capacitance
3
G 2
D
4
2
G 1
94 9307
96 12647
1
BF966S Marking: BF966S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
12623
S
Absolute Maximum Ratings
T amb = 25 C, unless otherwise specifie d
Parameter
Test Conditions
Type
Symbol
Value
Unit
Drain - source voltage
V DS
20
V
Drain current
I D
30
mA
Gate 1/Gate 2 - source peak current
±
I G1/G2SM
10
mA
Total power dissipation
T amb
3
60 C
P tot
200
mW
Channel temperature
T Ch
150
C
Storage temperature range
T stg
–55 to +150 C
Maximum Thermal Resistance
T amb = 25 C, unles s otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm 3
plated with 35 m Cu
R thChA
450
K/W
Document Number 85004
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (8)
High cross modulation performance
•
154426497.012.png 154426497.013.png 154426497.014.png
BF966S
Vishay Telefunken
Electrical DC Characteristics
T amb = 25 C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min Typ Max Unit
Drain - source
breakdown voltage
I D = 10 A, –V G1S = –V G2S = 4 V
V (BR)DS
20
V
breakdown voltage ±
I G1S = 10 mA, V G2S = V DS = 0
±
V (BR)G1SS 8
14
V
Gate 2 - source
breakdown voltage
±
I G2S = 10 mA, V G1S = V DS = 0
±
V (BR)G2SS 8
14
V
Gate 1 - source
leakage current
±
V G1S = 5 V, V G2S = V DS = 0
±
I G1SS
50 nA
Gate 2 - source
leakage current
±
V G2S = 5 V, V G1S = V DS = 0
±
I G2SS
50 nA
Drain current
V DS = 15 V, V G1S = 0, V G2S = 4 V
BF966S
I DSS
4
18 mA
DS
G1S
G2S
BF966SA
I DSS
4
10.5 mA
BF966SB
I DSS
9.5
18 mA
Gate 1 - source
cut-off voltage
V DS = 15 V, V G2S = 4 V, I D = 20 A
–V G1S(OFF)
2.5
V
Gate 2 - source
cut-off voltage
V DS = 15 V, V G1S = 0, I D = 20 A
–V G2S(OFF)
2.0
V
Electrical AC Characteristics
V DS = 15 V, I D = 10 mA, V G2S = 4 V, f = 1 MHz , T amb = 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Forward transadmittance
z
y 21s z
15 18.5
mS
Gate 1 input capacitance
C issg1
2.2
2.6 pF
Gate 2 input capacitance V G1S = 0, V G2S = 4 V
C issg2
1.1
pF
Feedback capacitance
C rss
25
35
fF
Output capacitance
C oss
0.8
1.2 pF
Power gain
G S = 2 mS, G L = 0.5 mS, f = 200 MHz
G ps
25
dB
g
G S = 3,3 mS, G L = 1 mS, f = 800 MHz
G ps
18
dB
AGC range
V G2S = 4 to –2 V, f = 800 MHz
G ps
40
dB
Noise figure
G S = 2 mS, G L = 0.5 mS, f = 200 MHz
F
1.0
dB
G S = 3,3 mS, G L = 1 mS, f = 800 MHz
F
1.8
dB
www.vishay.de
•
FaxBack +1-408-970-5600
Document Number 85004
2 (8)
Rev. 3, 20-Jan-99
Gate 1 - source
154426497.015.png 154426497.001.png
BF966S
Vishay Telefunken
Typical Characteristics (T amb = 25 C unless otherwise specified)
300
80
250
70
V DS = 15V
V G1S =4V
60
3V
200
50
2V
150
40
30
1V
100
20
50
10
0V
0
0
–1V
0
20 40 60 80 100 120 140 160
T amb – Ambient Temperature ( °C )
–1
0
1
2
3
4
5
96 12159
12764
V G2S – Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Drain Current vs. Gate 2 Source Voltage
36
4.0
V G1S =2V
32
1.5V
3.5
V DS =15V
V G2S =4V
f=1MHz
28
1V
3.0
V G2S =4V
24
0.5V
2.5
20
2.0
16
12
0V
1.5
8
–0.5V
1.0
4
–1V
0.5
0
0
12762
024680246
V DS – Drain Source Voltage ( V )
12765
0 3 6 9 12 15 18 21 24 27 30
I D – Drain Current ( mA )
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Drain Current
100
2.00
90
V DS = 15V
V G2S =6V
1.75
V G2S =4V
I D =10mA
f=1MHz
80
1.50
5V
4V
70
60
1.25
50
3V
1.00
40
2V
0.75
30
1V
0.50
20
10
0V
0.25
–1V
0
0
–1
0
1
2
3
4
5
0 2 4 6 8 101214161820
V DS – Drain Source Voltage ( V )
12763
V G1S – Gate 1 Source Voltage ( V )
12766
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
Document Number 85004
www.vishay.de
•
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (8)
154426497.002.png 154426497.003.png
BF966S
Vishay Telefunken
4.0
20
f=1300MHz
3.6
V DS =15V
V G1S =0
f=1MHz
18
I D =5mA
3.2
16
I D =10mA
I D =20mA
2.8
14
1000MHz
2.4
12
2.0
10
700MHz
1.6
8
1.2
6
400MHz
V DS =15V
V G2S =4V
f=100...1300MHz
0.8
4
0.4
2
100MHz
0
0
12767
3 2 10123456
V G2S – Gate 2 Source Voltage ( V )
12770
0 2 4 6 8 101214161820
Re (y 11 ) ( mS )
Figure 7. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
Figure 10. Short Circuit Input Admittance
10
0.3
4V
f= 200MHz
0
3V
2V
1V
f=1300MHz
–10
0.2
I D =5mA
10mA
20mA
–20
0V
–30
–0.5V
0.1
–40
–1V
1000MHz
–50
0.0
V DS =15V
V G2S =4V
f=100...1300MHz
–60
700MHz
V G2S =–2...–3V
–70
–0.1
5 4 3 2 10123
V G1S – Gate 1 Source Voltage ( V )
0
0.1
0.2
0.3
0.4
0.5
12768
12772
Re (y 12 ) ( mS )
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
Figure 11. Short Circuit Reverse Transfer Admittance
24
5
V G2S =4V
V DS =15V
V G2S =4V
f=100...1300MHz
22
V DS =15V
f=1MHz
0
f=100MHz
20
–5
18
3V
16
–10
I D =5mA
10mA
20mA
14
–15
400MHz
700MHz
12
–20
10
8
–25
2V
6
–30
1000MHz
4
1V
1300MHz
–35
2
0V
0.5V
0
–40
0
5
10
15
20
25
30
–8 –4
0
4 8 12 16 20 24
Re (y 21 ) ( mS )
12769
I D – Drain Current ( mA )
12771
Figure 9. Forward Transadmittance vs. Drain Current
Figure 12. Short Circuit Forward Transfer Admittance
www.vishay.de
•
FaxBack +1-408-970-5600
Document Number 85004
4 (8)
Rev. 3, 20-Jan-99
154426497.004.png 154426497.005.png 154426497.006.png 154426497.007.png
BF966S
Vishay Telefunken
8
f=1300MHz
7
I D =10mA
6
I D =5mA
20mA
1000MHz
5
4
700MHz
3
400MHz
2
V DS =15V
V G2S =4V
f=100...1300MHz
1
100MHz
0
0
0.5
1.0
1.5
2.0
2.5
12773
Re (y 22 ) ( mS )
Figure 13. Short Circuit Output Admittance
Document Number 85004
www.vishay.de
•
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
5 (8)
154426497.008.png 154426497.009.png 154426497.010.png 154426497.011.png

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